Abstract
To reduce facet reflectivity in travelling wave (TW) semiconductor optical amplifiers (SOA), the use of antireflection (AR) coating is a well-known technique [1]. As this technique also requires almost exact control of the coating thickness and the refractive index of the coating material, it is not always viable. In an attempt to alleviate this problem, the combination of a window structure [2] with AR coating was proposed. It has been shown recently [3], however, that the window structure is effective only if the window thickness can be controlled to within tenths of a micron – a precision which is not yet achievable with the current state of processing technology. Until the technological barriers are overcome, these two approaches cannot De considered practical.
© 1995 Optical Society of America
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