Abstract

As the erbium-doped optical fiber amplifier has gained acceptance in the telecommunications industry, the majority of attention has focussed on the choice of the semiconductor pump source, especially with regards to lifetime and power scalability. High output power erbium optical amplifiers have been demonstrated with both 980 and 1480 nm pump diodes. However there are serious questions regarding power scalability once more than two pump diodes are required. A +22.3 dBm output power amplifier has been reported using four 1480 nm pump diodes1.

© 1992 Optical Society of America

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