Abstract

We show that areas of high edge gain in avalanche photodiodes are associated with locally enhanced diffusion depth by employing a novel method using scanning electron microscopy of selectively etched Zn diffused structures.

© 2020 The Author(s)

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More Like This
Shallow-Mesa InP Avalanche Photodiode with Ultralow Dark Current

Jingchang Zhang, Yaru Han, Bing Xiong, Yi Luo, Changzheng Sun, Lai Wang, Jian Wang, Yanjun Han, Zhibiao Hao, Hongtao Li, and Jiadong Yu
JTh2D.18 CLEO: Applications and Technology (CLEO_AT) 2020

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S.R. Cho, S.K. Yang, J.S. Yu, J.S. Ma, S.D. Lee, A.G. Choo, and T.I. Kim
CTuH5 Conference on Lasers and Electro-Optics (CLEO) 2000

Low-Noise GaN p-i-n Avalanche Photodiodes for Ultraviolet Applications Using an Ion-Implantation Isolation Technique

Minkyu Cho, Hoon Jeong, Chuan-Wei Tsou, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Russell D. Dupuis, and Shyh-Chiang Shen
AF1I.7 CLEO: Applications and Technology (CLEO_AT) 2020