A silicon-based gated-diode that features a p-i-n junction diode is described. This device acts like hybrid diode-transistor where the diode elements detect incident light and the transistor structure is used to adjust the current flow.
© 2016 Optical Society of America
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
Login to access OSA Member Subscription