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Conferences > NLO > 2019 > NTu4A > NTu4A.40

Thick Heteroepitaxial Growth of ZnSe on GaAs Substrates for Frequency Conversion in the MLWIR

Shivashankar Vangala, Vladimir Tassev, and Michael Snure

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Abstract

Over 100 μm thick single crystalline ZnSe layers have been produced by hydride vapor phase epitaxy on GaAs substrates. Thick growth on OP-GaAs templates is a step closer for realizing frequency conversion in the MLWIR.

© 2019 The Author(s)

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