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Periodic modulation of Al composition in a periodically-inverted AlGaAs waveguide

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Abstract

We have investigated a periodically-inverted Al0:40Ga0:60As layer in a quasi-phase-matching AlGaAs waveguide using cathodoluminescence spectroscopy, and found that Al-composition modulation is formed by the anisotropic diffusion of Al/Ga atoms during the molecular-beam epitaxy growth process.

© 2011 Optical Society of America

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