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Fabrication and optical properties of GaN-based quantum dots

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Abstract

We discuss our recent progress in fabrication and optical of GaN-based quantum dots of high quality. Strong polarization effect induced by GaN/AlN heterointerface leads to various unique features such as long radiative recombination lifetime. A new type of quantum dot lasers operated without population-inversion is proposed utilizing the polarization effect.

© 2002 Optical Society of America

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