Very High-Speed GaN-Based Cyan Light Emitting Diode on Patterned Sapphire Substrate for 1 Gbps Plastic Optical Fiber Communication

J.-W. Shi; J.-W. Shi; Che-Wei Lin; Wei Chen; J. E. Bowers; J.-K. Sheu; Ching-Liang Lin; Yun-Li Li; Juri Vinogradov; Olaf Ziemann

doi:10.1364/NFOEC.2012.JTh2A.18

National Fiber Optic Engineers Conference
OSA Technical Digest (Optica Publishing Group, 2012),
paper JTh2A.18
•https://doi.org/10.1364/NFOEC.2012.JTh2A.18

Very High-Speed GaN-Based Cyan Light Emitting Diode on Patterned Sapphire Substrate for 1 Gbps Plastic Optical Fiber Communication

J.-W. Shi, Che-Wei Lin, Wei Chen, J. E. Bowers, J.-K. Sheu, Ching-Liang Lin, Yun-Li Li, Juri Vinogradov, and Olaf Ziemann

National Fiber Optic Engineers Conference 2012

Los Angeles, California United States
4–8 March 2012
ISBN: 978-1-55752-935-0

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Poster Session II (JTh2A)

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J. -. Shi, C. Lin, W. Chen, J. E. Bowers, J. -. Sheu, C. Lin, Y. Li, J. Vinogradov, and O. Ziemann, "Very High-Speed GaN-Based Cyan Light Emitting Diode on Patterned Sapphire Substrate for 1 Gbps Plastic Optical Fiber Communication," in National Fiber Optic Engineers Conference, OSA Technical Digest (Optica Publishing Group, 2012), paper JTh2A.18.

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Abstract

We demonstrate novel cyan light-emitting-diodes (LEDs) on patterned-sapphire substrate with record-high electrical-to-optical bandwidth (0.38 GHz) among visible LEDs. 0.93Gbps error-free transmission in plastic-optical-fiber can be achieved by using such device under only 20mA bias current.

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