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Effects of nonlinear losses and design geometry on gain in silicon waveguides with erbium doped regions

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Abstract

We investigate the effects of design geometry and nonlinear losses on gain in silicon with erbium-doped regions. Multi-trench designs distribute intensity more uniformly and reduce the nonlinear losses including up conversion and excited state absorptions.

© 2010 IEEE Communications Society, IEEE Photonics Society, OSA, Telcordia

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