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Conferences > N3 > 2013 > NSa4A > NSa4A.2

Photoluminescence properties of gallium nitride nanowires grown by plasma-enhanced hot filament chemical vapor deposition

Y. Q. Wang, R. Z. Wang, B. B. Wang, B. Wang, and H. Yan

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Abstract

Gallium nitride nanowires (GaN NWs) were synthesized by plas ma-enhanced hot filament chemical vapor deposition. The structures and photoluminescence properties were measured and analyzed.

© 2013 Optical Society of America

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