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Application of Quantum Cascade Laser Absorption Spectroscopy for Correlation Studies in Plasma Etching Processes in the Semiconductor Industry

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Abstract

Applying quantum cascade laser absorption spectroscopy a correlation could be demonstrated between the concentration of the etching products SiF4 and CO and the etching rate of ultra-low-k SiCOH in a low-pressure rf plasma containing CF4.

© 2018 The Author(s)

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