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Conferences > MICS > 2016 > MS2C > MS2C.2

QPM grating propagation in HVPE-grown orientation-patterned gallium arsenide (OP-GaAs) and gallium phosphide (OP-GaP)

Peter G. Schunemann, Daniel J. Magarrell, and Lee Mohnkern

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Abstract

Propagation of parallel domain boundaries with minimal duty cycle error is required for maximum conversion efficiency in quasi-phasematched (QPM) semiconductors OP-GaAs and OP-GaP: effect of V/III ratio, growth rate, growth temperature was examined.

© 2016 Optical Society of America

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