Enhanced laser beam shaping for super-resolved imaging in silicon is demonstrated by applying pico-seconds pulsed pump at 775nm having increased penetration-depth into the silicon (than pump at 532nm) and yielding sharper PSF due to reduced diffusion effect of the generated free-charge-carriers.

© 2019 The Author(s)

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription