Abstract

Measurement of large-signal performance for semiconductor laser and other optoelectronic devices is important. But many times we don’t have expensive large signal instruments, if we can predict the large-signal performance of a semiconductor laser by small-signal scattering parameters measured using a microwave network analyzer. This will be an attractive thing. In this paper, we present a simple approach to deriving the dynamic P-I curved surface for laser diode from the small-signal frequency responses measured using a microwave network analyzer. Then the linear response range, modulation efficiency, optimal driving conditions at different frequency, also the large-signal performance of the laser diode can be predicted from the dynamic curved surface. Experiments show a good agreement between the evaluated characteristics and the measured large-signal performance.

© 2012 Optical Society of America