Abstract

We investigate and find that the quality of titanium nitride grown at 350°C and 375°C using atomic layer deposition on silicon and sapphire substrates respectively are approaching the metallicity of sputtered films.

© 2018 The Author(s)

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription