Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Spectroscopic Method for Determining the Strain Configuration in Semiconductor Optoelectronic Devices and Structures

Not Accessible

Your library or personal account may give you access

Abstract

The ratio of heavy-hole to light-hole interband transition energy shifts as a function of strain can be used to determine the strain configuration of semiconductor devices or structures for a wide range of strains.

© 2006 Optical Society of America

PDF Article
More Like This
Dependence on intrinsic strain of packaging-induced strain in quantum-well laser diodes

Mark L. Biermann, Steven Duran, Jens W. Tomm, Axel Gerhardt, and Dirk Lorenzen
CTuP3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2004

Hole eigenenergies in GaAsP/AlGaAs single quantum wells with biaxial tensile strain

Daniel C. Bertolet, Jung-Kuei Hsu, and Kei May Lau
TuE7 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989

Gallium Nitride-Organic Semiconductor Heterojunctions for Optoelectronic Devices

Yoon-Kyu Song, Hyunjin Kim, Tolga Atay, William R. Patterson, Arto V. Nurmikko, Maria Gherasimova, Kyung K. Kim, and Jung Han
CTuE1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved