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Conferences > LAOP > 2016 > LW2B > LW2B.2

THz Photoconductivity in GaAs:Er at 1550 nm, and Comparison with Cross-Gap Performance

E.R. Brown, W-D. Zhang, A. Feldman, T. Harvey, and R. Mirin

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Abstract

This paper summarizes research aimed at understanding the sub-bandgap ultrafast photoconductivity (~1550 nm) in heavily doped GaAs:Er, and why it is comparable in strength and THz performance to traditional cross-gap (≈800 nm) performance.

© 2016 Optical Society of America

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