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Room Temperature Near-IR Photoluminescence and Lasing from Self-Organized Ge QDs Formed by Ion Implantation in Silicon

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Abstract

We report strong IR photoluminescence (PL) in the temperature range of 15 to 300 K as well as morphology measurements in Ge quantum dots (QDs) layer being grown by ion beam implantation (IBI) technique via high temperature annealing for self-organization.

© 2017 Optical Society of America

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