Abstract

Two-dimensional (2D) layered materials, such as MoS2 are often used in electronic and optoelectronic devices as active media in the form of a few layers. The orientations of different layers and their stacking configurations alter the crystal symmetry, thereby modifying the band structure and the electronic properties of the device. Experimental studies have found the onset of a gate-tunable superconducting and insulating phase in bilayer graphene at a specific layer orientation angle [1]. Since MoS2 also has layer stacking, and layer number dependent properties, a thorough understanding of the stacking sequences and the number of layers is essential for a full exploration of their potential. Raman spectroscopy serves as a non-destructive method for the identification of various configurations of layer stacking and for the determination of the number of layers in MoS2.

© 2019 Japan Society of Applied Physics, The Optical Society (OSA)

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