Abstract

In order to reduce thermal stress introduced into hybrid wafer bonding [1,2], surface activated bonding (SAB) based on fast atom beam (FAB) [3] was proposed, which can achieve bonded wafer at room temperature. In our previous report, in order to maintain semiconductor crystal quality through FAB irradiation, we reported the influence of irradiation to photoluminescence (PL) properties of GaInAs/InP wafers by various FAB sources and figured out that Xe-FAB has the lowest damage to PL intensity. Beyond that, InP/Si wafer bonding by Xe-FAB is realized which has enough bonding strength to be introduced into hybrid laser fabrication process [4]. In this report, PL intensity after InP/SOI wafer bonding process is investigated.

© 2019 Japan Society of Applied Physics, The Optical Society (OSA)

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