Abstract

Semiconductor membrane lasers are promising light source for on-chip interconnection on LSI [1]. However, relatively large thermal resistance due to low thermal conductivity of bottom insulator is one of the problems to be solved and direct bonding with minimum SiO2 thickness should be realized. In recent years, surface activated bonding based on fast atom beam was proposed [2], which can realize wafer bonding at room temperature. However, oxides like SiO2 are not suitable material to this method in a general condition. Therefore, to solve this problem, the Si nano-film layer was used [3]. In this report, physical bonding strength after Si or InP to SiO2 wafer bonding process is investigated.

© 2019 Japan Society of Applied Physics, The Optical Society (OSA)

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