Abstract

Atomically thin transition metal dichalcogenides (TMDs) is ideal two-dimensional system and possesses valley degrees of freedom inherently, making monolayer (1L) TMDs an excellent platform to explore new physics and applications. The exploits of the valley degrees of freedom require the understanding and control of valley depolarization process. Recently we reported momentum-dependent long-range electron-hole (e-h) interactions screened by naturally doped 2D electrons play an important role in the valley de-polarization process of exciton [1]. Here we report that intentional carrier doping could control the valley depolarization process by fine-tuning of Coulomb screening.

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