Abstract
Silicon based heterojunction solar cells have gained popularity in the market recently because such structure with c-Si as absorber layer can have the power conversion efficiency me than 25% [1]. Several efforts has been made to reduce the cost by curtailing process steps e.g., by using ZnO as both emitter and anti-reflector layers. But the experimentally reported efficiency of ZnO/p-Si solar cells is somewhat below the theoretically predicted values.
© 2018 The Japan Society of Applied Physics
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