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Doping effects on minority-carrier lifetimes in ultrananocrystalline diamond/hydrogenated amorphous carbon composite films

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Abstract

Ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite (UNCD/a-C:H) films possess specific characteristics as follows: (a) the appearance of additional energy levels in diamond bandgap [1]; and (b) large absorption coefficients ranging from visible to ultraviolet [2], both of which might be due to large number of grain boundaries between UNCD grains and those between UNCD grains and a-C:H [1,3]. Owing to the above-mentioned specifics, UNCD/a-C:H films are expected to be applied to photovoltaics such as UV sensors. Actually, we have fabricated pn heterojunction diodes comprising UNCD/a- C:H films and Si substrates, and confirmed their photocurrents [4,5]. Although the minority-carrier lifetime is an important factor for photovoltaics, it has never been studied for UNCD/a-C:H. In this work, we experimentally measured the minority carrier lifetimes for typical samples.

© 2017 Japan Society of Applied Physics, Optical Society of America

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