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Conferences > JSAP > 2017 > 7a_A404 > 7a_A404_4

Characterizations of a Hexagonal BN-encapsulated Multilayer MoS2 Photodetector

Tomoki Ayano, Akihisa Saito, and Shintaro Nomura

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Abstract

Atomically thin layered semiconductor transition metal dichalcogenides have attracted considerable attention for applications such as field-effect transistors (FETs) and photodectors [1]. High photoresponsivity has been demonstrated in molybdenum disulfide (MoS2) FETs, but the photoresponsivity was suffered by the scatterings of the carriers by, for example, the oxide fixed charges and the trapping states induced by adsorbates on the MoS2 channel.

© 2017 Japan Society of Applied Physics, Optical Society of America

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