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The monolithic integration of optical III-V Laser Diode (LD) especially InP based LD is a predominant factor in the actualization of light sources on the silicon platform. We have proposed the monolithic integration of III-V LD epitaxial layers on the wafer-bonded InP/Si substrate via MOVPE. Our unique approach is that we do the adhesion of thin film InP and Si substrate before the MOVPE growth. We have already shown the successful demonstration of GaInAsP LD on InP/Si substrate.[1-2] In this paper, we report the room temperature lasing operation of 1.5 μm GaInAsP LD on InP/Si substrate resulting in the lowest threshold current density at the room temperature.
© 2017 Japan Society of Applied Physics, Optical Society of America
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