Abstract

The study and optimization of emitter zinc oxide/crystalline silicon heterointerface with a focus on recombination has been identified as the most important issue to fully utilize the potential of ZnO/Si heterojunction solar cell [1]. ZnO/Si interface properties are very crucial to the performance of solar cell due to the fact that the interface is located inside the space charge region. Front surface recombination of Si or the interface recombination velocity of ZnO/Si interface is the most important parameter in this simulation that dictates the efficiency of solar cell. It is known that the open circuit voltage (Voc) of the cell with the negative band offset at the absorber/emitter interface may be limited by interface recombination [2].

© 2017 Japan Society of Applied Physics, Optical Society of America