Abstract

Heterogeneous integration of SiGe, Ge and III-V semiconductors on Si enables us to integrate photodetectors (PDs), modulators, and laser didoes (LDs) on Si photonics platform. Since SiGe/Ge and III-Vs have high hole and electron mobility, we are also able to integrate monolithically high-performance metal-oxide-semiconductor (MOS) transistors based on those semiconductors. Thus, the heterogeneous integration is a key enabler to realize high-performance and low-power electronic-photonic integrated circuits (EPICs) as shown in Fig. 1. We present our recent developments of EPICs based on SiGe/Ge and III-V integration on Si platform for near and mid-infrared photonics.

© 2016 Japan Society of Applied Physics, Optical Society of America