Abstract

Transition metal dichalcogenides (TMDs) have attracted much attention as a novel two-dimensional semiconductor, and also are promising candidates for the future optoelectronic devices [1,2]. Van der Waals hetero-structures (vdWHs) composed of TMDs are key structures to develop these devices. Efficient charge separation [3] and formation of long-lived interlayer excitons [4] due to the type II band alignment enables exciton engineering including valleytronics [5] or novel light harvesting devices [6]. In this context, modulation of interplaying between inter-layer and intra-layer excitons/trions is an important issue to control optical device performance. In this study, we report the modulation of intra-layer and inter-layer exciton/trion properties in monolayer (1L)-MoS₂/1L-MoSe₂ vdWH by means of the field effect gating.

© 2016 Japan Society of Applied Physics, Optical Society of America