Abstract

Monolayer transition metal dichalcogenides (1L-TMDs) have attracted much attention as a novel two-dimensional direct band gap semiconductor [1], and also are promising candidate to realize the future optoelectric devices including ‘valleytronic’ dvices [2]. However, the optical properties of 1L-TMDs is often limited due to the unintentional electron doping caused by atomic defects or impurities [3]. Therefore, establishing the convenient method to control the optical properties of 1L-TMDs is valuable for application and fundamental study. In this study, we demonstrate that the solution-based chemical doping is an effective method to modulate the photoluminescence (PL) properties of monolayer MoS₂ (1L-MoS₂) that is well known 1L-TMDs [4].

© 2014 Japan Society of Applied Physics, Optical Society of America