Physics-based Modeling and Simulation of Conductive-Bridge Random Access Memory (CBRAM)

Yudi Zhao; Peng Huang; Xiaoyan Liu; Jinfeng Kang

doi:10.1364/ISST.2017.ISu5B.6

The International Photonics and Optoelectronics Meeting 2017
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper ISu5B.6
•https://doi.org/10.1364/ISST.2017.ISu5B.6

Physics-based Modeling and Simulation of Conductive-Bridge Random Access Memory (CBRAM)

Yudi Zhao, Peng Huang, Xiaoyan Liu, and Jinfeng Kang

Information Storage System and Technology 2017

Wuhan, Hubei China
3–5 November 2017
ISBN: 978-1-943580-37-8

From the session
2nd Workshop on Memristor Theory, Device and Applications in Wuhan (ISu5B)

Open Access

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Y. Zhao, P. Huang, X. Liu, and J. Kang, "Physics-based Modeling and Simulation of Conductive-Bridge Random Access Memory (CBRAM)," in The International Photonics and Optoelectronics Meeting 2017, OSA Technical Digest (online) (Optica Publishing Group, 2017), paper ISu5B.6.

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Abstract

A physics-based compact model for conductive-bridge random access memory (CBRAM) is developed to capture the resistive switching behaviors correlated with materials and operation schemes based on atomic Monte-Carlo simulations.

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