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Realization of coexistence of memristor and memcapacitor in Schottky heterostructure devices for neuromorphic applications

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Abstract

We demonstrated a depletion-region-width modulation model for realizing the coexistence of memristor and memcapacitor. The memory behaviors can be attributed to the migration of oxygen ions in Schottky junction depletion region under external electric field.

© 2017 Optical Society of America

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