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Conferences > ISST > 2017 > ISu2A > ISu2A.8

Conduction mechanism study on p-type Cu2O based memristive device

Peng Yan, Yi Li, Kanhao Xue, Nian Liu, Huajun Sun, and Xiangshui Miao

Open Access Open Access

Abstract

P-type Cu2O is a promising CMOS-compatible candidate to fabricate memristive device. We prove that the formation of conduction channel is due to Cu vacancies by using first-principles calculations and some physical characterization methods. The microscopic switching and conduction mechanism of our Cu2O-based device has been thoroughly investigated.

© 2017 Optical Society of America

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