The nano patterns of phase-change material Ge2Sb2Te5 are fabricated by the femto-second laser-induced forward transfer. The size and the phase state of the Ge2Sb2Te5 patterns can be effectively controlled by varying the laser fluence and film thickness. Also, the multilevel electronic states of fabricated patterns are observed through the C-AFM . This research has great potential in the area of the optical and the electrical data storage.

© 2011 OSA

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