In this paper, we present a low-cost and high-throughput approach to maskless nanolithography that uses a plasmonic solid immersion lens (SIL) optical head which consists of a SIL and a sharp-ridge nanoaperture for a high strong nanometer-size optical spot. According to the use of the evanescent field generated from SIL for near-field active air-gap control, the plasmonic SIL can fly ~20 nm above a photoresist-coated Si-wafer that moves at speed of 0 ~ 200 mm/s and perform the line patterning with nanometer-size width. We have experimentally demonstrated patterning with a line width (full width at half magnitude: FWHM) of ~130 nm.

© 2011 Optical Society of America

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