Abstract
Broad area semiconductor (BAS) laser are relevant high conversion light sources despite that the spatial and temporal quality of the emitted beam is relatively low due to the absence of a natural transverse mode selection mechanism [1]. To overcome this serious drawback different solutions have been incorporated in the design, such as external gratings, external injection spatially modulated injection or distributed feedback. In addition, in BAS lasers a modulation instability (or Bespalov-Talanov instability) can occur due to nonlinear focussing, leading to filamentation effects and deteriorating the spatial quality of the laser emission. In absence of cavity mirrors, planar semiconductor structures can act as light amplifiers undergoing however analogue disadvantages.
© 2013 IEEE
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