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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper IThC5
  • https://doi.org/10.1364/IQEC.2004.IThC5

Biexciton in single GaN/AIN self-assembled quantum dots

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Abstract

We report single dot spectroscopy of GaN/AlN self-assembled quantum dots. Excitation power dependence allows the assignment of a biexcion peak. The biexciton binding energy is negative and the magnitude is about 54 me V.

© 2004 Optical Society of America

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