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  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1998),
  • paper QTuG11

Quantum beats of homogeneously broadened excitons in GaN

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Abstract

It has been observed that the phase of quantum beats shifts by π if the incident polarization is changed from collinear to crossed linear. Schmitt–Rink et al. explained this using a single particle model based on the band structure.1 However, in their experimental results they also observed a decay rate and intensity dependence on the incident polarization, which their model cannot explain. On the other hand, Saiki et al. proposed an excitonic model and found that the decay rate and intensity changes depending on if the system is homogeneously or inhomogeneously broadened when changing the incident polarization.2 In this paper, we present the polarization dependence of quantum beats from homogeneously broadened in a high- quality GaN epitaxial layer.

© 1998 Optical Society of America

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