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Optica Publishing Group
  • International Quantum Electronics Conference
  • 1996 OSA Technical Digest Series (Optica Publishing Group, 1996),
  • paper WL126

Laser synthesis of nanosized silicon nitride

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Abstract

The basic principles for laser synthesis of nanosized silicon nitride (Si3N4) are based on the strong effects of Silane (SiH4) absorbing CO2 laser energy. A CW CO2 laser beam illuminates the mixed reactant gases (SiH4 + NH3) which are rapidly flowing, and the molecules of SiH4 and NH3 are induced to dissociate thermally. The resultants nucleate and grow under appropriate conditions of temperature and pressure. And then the nanosized Si3N4 powders were yielded.

© 1996 Optical Society of America

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