Abstract

Low temperature growth of III-V compound semiconductors by molecular beam epitaxy (LT- MBE) provides a unique method of tailoring carrier lifetimes for photonic and electronic device applications. For the GaAs system the LT-MBE growth results in a high density of deep level arsenic anti-site defects which pin the Fermi level near midgap. Subsequent annealing of LT-GaAs results in As precipitates which through Schottky barrier action depletes carriers around the precipitates rendering the material semi-insulating.

© 1996 Optical Society of America

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