Among the different III-V compound pseudobinary alloys, InGaAIAs is one of the less investigated materials inspite of its potential electro-optic applications. Band gap engineering is an important aspect, since the material can be grown lattice matched to the InP substrate and has a wide tunable band gap ranging between the two ternary al loys of InGaAs (0.76eV, 1.63μm) and InAlAs (1.46eV, 0.85μm). In this paper we present the results of band gap engineering of the InGaAIAs material. Epilayers with good optical and crystalline nature are grown with different band gaps spanning the whole range of the two bounding ternaries (InGaAs and InAlAs). Some interesting observations are made on the low temperature PL studies, which are reported for the first time.

© 1996 Optical Society of America

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