Abstract

Understanding the physics of the quantized semiconductor structures is the key to unlock their potential optoelectronic applications. Semiconductor quantum dots material has the potential for fabricating laser with reduced threshold current and enhanced differential gain. One of the inherent limits of quantum dots material lies within the ultrafast carrier dynamics. Theoretical works in the past has predicted a restricted interaction between phonons and carriers in the quantum dots system [1,2]. This phonon bottleneck behavior can reduce the carrier capture efficiency, and therefore hinder the potential device performance. Experimental researches have not yet to fully explore the ultrafast carrier dynamics of semiconductor quantum dots due to the lack of quality samples. However, recent advances in the molecular beam expitaxy (MBE) growth of self-organized quantum dots [3] have provided an excellent opportunity to study the ultrafast carrier dynamics in the OD quantum electronics structures.

© 1996 Optical Society of America