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Optica Publishing Group
  • International Quantum Electronics Conference
  • 1996 OSA Technical Digest Series (Optica Publishing Group, 1996),
  • paper ThQ2

AlGaAs optical phonon replicas in the photoluminescence spectra of GaAs layer in an AlxGa1−x As/GaAs heterostructure

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Abstract

The phonon modes of AlxGa1−xAs alloys have been studied with far-infrared absorption and Raman spectroscopy [1,2] and their determination of the phonon energies vs the aluminium concentration x show a larger scatter. The theoretical results are also not consistent with experimental results. Very recently, Reynolds et al [3] observed the phonon replicas in the photoluminescence (PL) spectra of an Al0.24Ga0.76 As alloy grown by molecular beam epitaxy (MBE). However, as they pointed out in their paper, the phonon replicas are not generally seen in the PL spectra of direct gap AlxGa1−xAs alloys.

© 1996 Optical Society of America

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