Abstract
After the creation of semiconductor lasers LDs with suppressed feedback were studied as travelling-wave amplifiers and sources of amplified spontaneous emission (ASE). Combining high brightness with low coherence semiconductor superluminescent diodes (SLDs) are the preferable light sources for many types of optical sensors and such applications as white-light interferometry and low-coherence reflectometry. Among commercial SLDs the devices based on traditional bulk heterostructures are dominant. For GaAs/(GaAl )As SLDs at = 800 – 850 nm typical free-space output power is 5 –10 mW and spectral linewidth is about 20 nm that corresponds to coherence length Lc ~ 35 µm [1,2]. Spectral and polarization parameters of bulk SLDs weakly depend on injection current (output power).
© 1996 Optical Society of America
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