Abstract

We have fabricated and investigated high performance short wavelength (λ = 980 nm) vertical-cavity surface-emitting laser diodes (VCSELs) intended as transmitters for short distance data links, board-to-board communication, and δ optical interconnection. Crystal growth is done by conventional solid source molecular beam epitaxy (MBE). The problem of excessive voltage drop in the p-type Bragg reflector is solved by using Be modulation and -doping at the hetero interfaces. Both, proton implantation [1] and selective oxidization [2] has been used for current confinement.

© 1996 Optical Society of America