Metal-semiconductor-metal photodiodes (MSM-PDs) are potential candidates for applications in high-speed optical receiver circuits because they offer advantages of low device capacitance and process compatibility with MESFET. For short distance optical links, transmission wavelengths around 800 nm are used. Therefore, silicon as well as III-V semiconductors such as GaAs can be chosen as the light detecting materials. However, Si MSM-PD can be easily integrated with Si circuity that dominates information processing, and hence avoiding hybridization between III-V detectors and Si circuit which will negatively affect cost in the production point of view.

© 1996 Optical Society of America

PDF Article
More Like This
High-speed metal-semiconductor-metal photodetector formed by silicon trenches

Jacob Y. L. Ho and K. S. Wong
CTuL23 Conference on Lasers and Electro-Optics (CLEO) 1996

Resonant cavity photodetectors in silicon-on-insulator

B. Pezeshki, D. M. Kuchta, J. J. Welser, and J. A. Kash
CTuW6 Conference on Lasers and Electro-Optics (CLEO) 1996

High Sensitivity, Low Voltage Silicon Photodetectors Compatible with Silicon Integration

J. A. Wahl, Dennis Rogers, and Sandip Tiwari
CMD5 Conference on Lasers and Electro-Optics (CLEO) 2001


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access Optica Member Subscription