Abstract

Formation of lateral p-n junctions by the expitaxial growth on patterned substrates is proposed and intensively investigated for the advanced surface light emitting devices, which will be useful in parallel optical information processing system in future. It is important to make p-n junctions with abrupt interfaces for the fabrication of high-quality devices. For this puipose, it is necessary to clarify the interface structure of the p-n junctions with a high spatial resolution. Since photon scanning tunneling microscope (P-STM) has not only the spatial resolution of the order of 10nm, but also ability of simultaneously measuring the optical spectra and the sample structure through the shear-force measurements, it is suitable for the optical characterization of lateral p-n junctions, in which electronic state is determined by the structure.

© 1996 Optical Society of America