Abstract
It is well-known that the interband absorption threshold of electron-doped, two-dimensional semiconductor quantum well structures evolves from a delta-function-like singularity associated with excitation of the IS exciton at zero carrier density, to a much weaker asymmetric lineshape at densities above ~2 x 1011 cm-2. The high- density lineshape is the quantum well, nearinfrared manifestation of the Fermi edge singularity (FES) observed in the X-ray absorption from core holes in metals. Quantitative understanding of the density dependence of the threshold lineshape in semiconductor quantum wells has been limited due to a lack of systematic, quantitative absorption data and due to the complexities of realistic theoretical treatments that must include electron spin, electron-electron interactions and the finite mass of the valence hole.
© 1996 Optical Society of America
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