Abstract

Low temperature molecular beam epitaxial (LT-MBE) growth of III-V compound semiconductors offers a unique approach for obtaining subpicosecond photoconductive response in these materials. We report the results on both InP and GaAs based material systems. External electrooptic sampling and femtosecond transient reflectivity measurements were used to characterize the photoexcited carrier response, which was observed to be of subpicosecond duration. Preliminary investigations of temperature dependent response suggest the possibility of shallow traps and/or amorphouslike behavior to be responsible for the electrical characteristics. The effect of the epitaxial growth conditions on the photoconductive response is also discussed.

© 1990 Optical Society of America

PDF Article
More Like This
Single picosecond pulse generation in low temperature MBE grown GaAs photoconductors

S. GUPTA, J. A. VALDMANIS, GERARD A. MOUROU, F. W. SMITH, and A. R. CALAWA
JI4 Conference on Lasers and Electro-Optics (CLEO) 1989

Low-Temperature MBE Growth of IΠ-V Materials on Si Substrates

Michael Y. Frankel, Thomas F. Carruthers, and Bijan Tadayon
G3 Ultrafast Electronics and Optoelectronics (UEO) 1993

Picosecond optical response of low growth temperature InGaAs/InAIAs multiple quantum wells

SE Ralph, M Hargis, PW Juodawlkis, C Verber, P Chin, and J Woodall
WI3 International Quantum Electronics Conference (IQEC) 1996

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription