Abstract
The large oscillator strengths of transitions between subbands of quantum wells1 have led to investigations of their application to mid and far IR detectors, lasers, and nonlinear optical devices. We discuss here the extremely large quadratic susceptibilities [χ(3)] predicted2 and observed3,4 in structures with inversion symmetry broken through bias electric fields or compositional asymmetry, using the conduction subbands of AlGaAs quantum wells as a prototype.
© 1990 Optical Society of America
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